Intel Foundry Achieves Milestone with One Million High-NA EUV Wafers

Intel Foundry has reached a significant milestone by processing one million 300 mm silicon wafers using High-NA EUV lithography. While initially intended for the 14A node via ASML TWINSCAN EXE:5000 systems, Intel expanded High-NA usage to the 18A node and specific Panther Lake SKUs. Meanwhile, Samsung intends to integrate High-NA EUV into its DRAM production by 2028, a move expected to intensify semiconductor industry competition and reshape the dynamics of memory manufacturing.